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PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Rev. 02 -- 21 August 2009 Product data sheet
1. Product profile
1.1 General description
Quadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal lines from the damage caused by ESD and other transients.
1.2 Features
I I I I ESD protection of up to 4 lines Max. peak pulse power: PPP = 200 W Ultra low leakage current: IRM = 50 pA Low clamping voltage: VCL = 12 V at IPP = 20 A I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge); IPP up to 20 A
1.3 Applications
I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Portable electronics I Subscriber Identity Module (SIM) card protection
1.4 Quick reference data
Table 1. Symbol Per diode VRWM reverse standoff voltage PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD 3.3 5 12 15 24 V V V V V Quick reference data Parameter Conditions Min Typ Max Unit
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Quick reference data ...continued Parameter diode capacitance PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD Conditions f = 1 MHz; VR = 0 V 215 165 73 60 45 300 220 100 90 70 pF pF pF pF pF Min Typ Max Unit
Table 1. Symbol Cd
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description cathode 1 common anode cathode 2 cathode 3 common anode cathode 4
1 2 3 6 5 4 1 2 3
006aaa156
Simplified outline
Symbol
6 5 4
3. Ordering information
Table 3. Ordering information Package Name PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code K4 K5 K6 K7 K8 Type number PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
2 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP IPP Parameter peak pulse power peak pulse current PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD Tj Tamb Tstg
[1] [2]
Conditions tp = 8/20 s tp = 8/20 s
[1][2] [1][2]
Min -65 -65
Max 200 20 20 10 6 4 150 +150 +150
Unit W A A A A A C C C
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1, 3, 4 or 6 to 2 or 5
Table 6. Symbol VESD
ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD PESDxS4UD series HBM MIL-STD-883 Conditions IEC 61000-4-2 (contact discharge)
[1][2]
Min
Max
Unit
-
30 30 30 30 23 10
kV kV kV kV kV kV
[1] [2]
Device stressed with ten non-repetitive ESD pulses. Measured from pin 1, 3, 4 or 6 to 2 or 5
Table 7. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 10 kV
IEC 61000-4-2; level 4 (ESD) HBM MIL-STD-883; class 3
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
3 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified Symbol Per diode VRWM reverse standoff voltage PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD IRM reverse leakage current PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD VBR breakdown voltage PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD VRWM = 3.3 V VRWM = 5 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 1 mA 5.3 6.4 12.5 15.5 25.5 5.6 6.8 14.5 18 27 5.9 7.2 16 20.5 29 V V V V V 300 80 0.05 0.05 0.05 800 200 15 15 15 nA nA nA nA nA 3.3 5 12 15 24 V V V V V Parameter Conditions Min Typ Max Unit
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
4 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified Symbol Cd Parameter diode capacitance PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD VCL clamping voltage PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD rdif
[1] [2]
[1][2]
Conditions f = 1 MHz; VR = 0 V
Min -
Typ 215 165 73 60 45 -
Max 300 220 100 90 70 8 12 8 13 17 24 22 33 33 52 25
Unit pF pF pF pF pF V V V V V V V V V V
IPP = 1 A IPP = 20 A IPP = 1 A IPP = 20 A IPP = 1 A IPP = 10 A IPP = 1 A IPP = 6 A IPP = 1 A IPP = 4 A IR = 5 mA
-
differential resistance
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1, 3, 4 or 6 to 2 or 5
104 PPP (W) 103
006aaa698
1.2 PPP PPP(25C) 0.8
001aaa633
102
0.4 10
1 1 10
102
103 tp (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C
Fig 3.
Peak pulse power as a function of exponential pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
5 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
220 Cd (pF) 180
006aaa700
80 Cd (pF) 60
006aaa701
140
(1)
40
(1) (2) (2)
100
20
(3)
60 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
f = 1 MHz; Tamb = 25 C (1) PESD3V3S4UD (2) PESD5V0S4UD
f = 1 MHz; Tamb = 25 C (1) PESD12VS4UD (2) PESD15VS4UD (3) PESD24VS4UD
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
I
10
006aaa699
IRM IRM(25C) -VCL -VBR -VRWM 1 -IRM -IR - P-N V
+
10-1 -100
-50
0
50
100 Tj (C)
150
-IPP
006aaa407
PESD3V3S4UD PESD5V0S4UD IR is less than 5 nA at 150 C PESD12VS4UD PESD15VS4UD PESD24VS4UD
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
Fig 8.
V-I characteristics for a unidirectional ESD protection diode
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
6 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
ESD TESTER
Rd 450 RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
Cs
IEC 61000-4-2 network Cs = 150 pF; Rd = 330
DUT (DEVICE UNDER TEST)
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div
PESD24VS4UD
GND GND
PESD15VS4UD
PESD12VS4UD GND PESD5V0S4UD GND GND GND
unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
PESD3V3S4UD
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
006aaa761
Fig 9.
ESD clamping test setup and waveforms
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
7 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
7. Application information
The PESDxS4UD series is designed for protection of up to 4 unidirectional data lines from the damage caused by ESD and surge pulses. The PESDxS4UD series may be used on lines where the signal polarities are above or below ground. The PESDxS4UD series provides a surge capability of 200 W per line for an 8/20 s waveform.
data- or transmission lines
1 2 3
6 5 4 n.c.
1 2 3
6 5 4 n.c.
unidirectional protection of 4 lines
bidirectional protection of 3 lines
006aaa762
Fig 10. Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxS4UD as close to the input terminal or connector as possible. 2. The path length between the PESDxS4UD and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
8 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
8. Package outline
3.1 2.7 6 5 4 0.6 0.2 1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 11. Package outline SOT457 (SC-74)
9. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3S4UD PESD5V0S4UD PESD12VS4UD PESD15VS4UD PESD24VS4UD Package SOT457 SOT457 SOT457 SOT457 SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3] [2] [3] [2] [3] [2] [3] [2] [3]
Packing quantity 3000 -115 -125 -115 -125 -115 -125 -115 -125 -115 -125 10000 -135 -165 -135 -165 -135 -165 -135 -165 -135 -165
For further information and the availability of packing methods, see Section 12. T1: normal taping T2: reverse taping
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
9 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
10. Revision history
Table 10. Revision history Release date 20090821 Data sheet status Product data sheet Change notice Supersedes PESDXS4UD_SER_1 Document ID PESDXS4UD_SER_2 Modifications:
*
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Product data sheet -
PESDXS4UD_SER_1
20060704
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
10 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXS4UD_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 21 August 2009
11 of 12
NXP Semiconductors
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 August 2009 Document identifier: PESDXS4UD_SER_2

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